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WG40N65DFJQ

IGBT, 31 A, 1.5 V, 66 W, 650 V, TO-3PF, 3 Pins

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Manufacturer	WEEN SEMICONDUCTORS
Manufacturer Part No	WG40N65DFJQCopy
Manufacturer Standard Lead Time	26 weeks
Order Code	4163315
Your Part Number
Technical Datasheet	Data Sheet See all Technical Docs

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Manufacturer	WEEN SEMICONDUCTORS
Manufacturer Part No	WG40N65DFJQCopy
Manufacturer Standard Lead Time	26 weeks
Order Code	4163315
Technical Datasheet	Data Sheet
Continuous Collector Current	31A
Collector Emitter Saturation Voltage	1.5V
Power Dissipation	66W
Collector Emitter Voltage Max	650V
Transistor Case Style	TO-3PF
No. of Pins	3Pins
Operating Temperature Max	150°C
Transistor Mounting	Through Hole
Product Range	-
SVHC	To Be Advised

Continuous Collector Current	31A
Power Dissipation	66W
Transistor Case Style	TO-3PF
Operating Temperature Max	150°C
Product Range	-

Collector Emitter Saturation Voltage	1.5V
Collector Emitter Voltage Max	650V
No. of Pins	3Pins
Transistor Mounting	Through Hole
SVHC	To Be Advised

WG40N65DFJQ Data Sheet

Country of Origin: Country in which last significant manufacturing process was carried outCountry of Origin:	China Country in which last significant manufacturing process was carried out
Tariff No:	85381090
US ECCN:	EAR99
EU ECCN:	NLR
RoHS Compliant:	Yes RoHS
RoHS Phthalates Compliant:	Yes RoHS
SVHC:	To Be Advised
Download Product Compliance Certificate	Product Compliance Certificate
Weight (kg):	.007736